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Low Viscosity RTV Silicone Potting Compound Two Component 1:1 for IGBT Power Module Charging Pile Encapsulation

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Low Viscosity RTV Silicone Potting Compound Two Component 1:1 for IGBT Power Module Charging Pile Encapsulation

Viscosity Part B : 4500~5000 mPa·s at 25°C

Curing Time : 4-12 hr at 25°C / 0.2 hr at 80°C

Color : Grey、White、Black

Model Number : HN-8806

Density : 1.50±0.05 g/cm³

Flame Retardancy : UL 94 V-0

Payment Terms : T/T,L/C,PayPal,WU

Mixing Ratio : 1:1 (Weight and Volume)

Viscosity Part A : 4500~5000 mPa·s at 25°C

Thermal Conductivity : ≥0.76 W/m·K

Packaging Details : 20kg/drum or 200kg/drum, export-grade moisture-proof packaging

Hardness After Curing : Shore A 50±5 (Flexible Elastomer)

Temperature Range : -50°C to +250°C

Target Application : IGBT Module, Charging Pile, Power Supply, High-Voltage Transformer, Battery Pack

Certification : UL 94 V-0, RoHS, REACH

Operating Time : 0.3-0.4 hr at 25°C

Dielectric Strength : 18-25 kV/mm

Price : Negotiable

Product Type : Low Viscosity RTV Two Component Addition Cure Silicone

Delivery Time : 3-5 working days for sample, 7-15 days for bulk order

Volume Resistivity : ≥1.0×10¹⁶ Ω·cm

Brand Name : HANAST

Place of Origin : Guangdong, China

Supply Ability : 500 Kilograms per Month

Low Viscosity : 4500-5000 mPa·s — Excellent PCB Penetration

MOQ : 20 Kilograms

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Product Overview

HN-8806 is a low-viscosity RTV two-component 1:1 addition cure silicone potting compound specifically developed for IGBT power module encapsulation and EV charging pile electronics protection. With its 4500-5000 mPa·s flowability, it penetrates densely packed PCB assemblies and under-fills tall components with ease — ideal for high-voltage power modules, fast-charging adapters, and battery pack sealing. Delivers 0.76 W/m·K thermal conductivity, UL 94 V-0 flame retardancy, and 18-25 kV/mm dielectric strength for demanding power electronics applications. RoHS and REACH compliant with factory-direct bulk supply available.

Key Features for IGBT & Charging Pile Applications

  • ✅ 4500-5000 mPa·s Low Viscosity — Superior flowability for complete PCB penetration around IGBT modules, transformers, and dense SMD assemblies without trapped air pockets
  • ✅ 0.76 W/m·K Thermal Conductivity — Reliable heat dissipation from IGBT power semiconductors and high-frequency transformers in fast-charging stations
  • ✅ 18-25 kV/mm Dielectric Strength — Critical high-voltage insulation for 800V EV charging architectures and high-voltage power modules
  • ✅ UL 94 V-0 Flame Retardant — Mandatory safety compliance for public EV charging infrastructure installed in parking structures and commercial buildings
  • ✅ 1:1 Mix Ratio with 0.3-0.4 hr Pot Life — Optimized working time for manual and automated potting of large charging pile power modules
  • ✅ -50°C to 250°C Temperature Range — Stable performance from arctic winter charging stations to desert solar-powered charging hubs
  • ✅ Low Shrinkage & Non-Corrosive — Zero stress on IGBT wire bonds and sensitive power semiconductor junctions during cure
  • ✅ Deep Section Curing — Uniform cure through thick potting sections in high-voltage transformer and inductor assemblies

Technical Specifications

Parameter Part A Part B
Appearance (Before Curing) Grey Fluid White Fluid
Viscosity at 25°C 4500~5000 mPa·s 4500~5000 mPa·s
Density at 25°C 1.50±0.05 g/cm³ 1.50±0.05 g/cm³
Mixing Ratio (A:B) 1:1 (Weight & Volume)
Operating Time 0.3-0.4 hr at 25°C
Curing Condition 4-12 hr at 25°C / 0.2 hr at 80°C
Property (After Curing) Value Test Standard
Appearance Grey Elastomer Visual
Hardness Shore A 50±5 GB/T 531.1-2008
Thermal Conductivity ≥0.76 W/m·K GB/T 10297-1998
Volume Resistivity ≥1.0*10¹⁶ Ω·cm GB/T 1692-92
Dielectric Strength 18-25 kV/mm GB/T 1693-2007
Moisture Absorption (24h, 25°C) 0.01-0.02% GB/T 8810-2005
Expansivity 210 µm/(m·°C) GB/T 20673-2006
Temperature Resistance -50 to +250°C Measured
Flame Retardancy UL 94 V-0 (3mm sample) UL 94

Target Applications

⚡ IGBT Power Module

Encapsulates IGBT modules in inverters, motor drives, and power converters. Low viscosity ensures complete under-fill beneath power semiconductor substrates.


Product Tags:

Low viscosity RTV silicone potting compound

      

Two component 1:1 silicone potting

      

IGBT power module encapsulation silicone

      
Wholesale Low Viscosity RTV Silicone Potting Compound Two Component 1:1 for IGBT Power Module Charging Pile Encapsulation from china suppliers

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